The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices

Integrated Ferroelectrics

Volumn 66, Issue , 2004, Pages 205-211

  Kim, J S ^a   Park, B H ^a   Choi, T J ^b   Shin, S H ^b   Lee, J C ^b   Lee, M J ^c   Seo, S A ^c   Yoo, I K ^c  

^a Konkuk University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

BST; Microwave tunable device; PBZ; Pulsed laser deposition; TCC; Tunability

Indexed keywords

CAPACITANCE; DIELECTRIC PROPERTIES; FILM GROWTH; MICROWAVE DEVICES; PULSED LASER DEPOSITION; TUNING;

BST; MICROWAVE TUNABLE DEVICES; PBZ; TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC); TUNABILITY;

FERROELECTRIC THIN FILMS;

EID: 33751168065     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490895112     Document Type: Article

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