Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate

IEEE Photonics Technology Letters

Volumn 10, Issue 5, 1998, Pages 657-659

  Ito, Toshio ^b   Yoshimoto, Naoto ^a,b   Magari, Katsuaki ^a,b   Sugiura, Hideo ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

Fabrication tolerance; Gating speed; Polarization independent; Semiconductor optical amplifier (SOA); Tensile strained MQW

Indexed keywords

FREQUENCY DIVISION MULTIPLEXING; LIGHT POLARIZATION; OPTICAL COMMUNICATION; OPTICAL FIBERS; SEMICONDUCTING INDIUM COMPOUNDS;

MULTIQUANTUM WELL SEMICONDUCTOR OPTICAL AMPLIFIERS (MQW SOA);

QUANTUM WELL LASERS;

EID: 0032071614     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.669233     Document Type: Article

References (9)

1. K. Habara, Y. Yamada, A. Misawa, K. Sasayama, M. Tsukada, T. Matsunaga, and K. Yukimatsu, "Demonstration of frequency-routing type photonic ATM switch (FRONTIER NET) prototype," in ECOC'96, Oslo, Norway, Sept. 1996, pp. 5-41, postdeadline ThC.3.4.
2. N. Yoshimoto, K. Magari, Y. Kawaguchi, K. Kishi, Y. Kondo, Y. Kadota, T. Ito, O. Mitomi, Y. Tohmori, Y. Yoshikuni, O. Nakajima, and Y. Hasumi, "Four-channel polarization-insensitive SOA gate array integrated with butt-jointed spot-size converters," Electron. Lett., vol. 33, no. 24, pp. 2045-2046, 1997.
3. T. Ito, N. Yoshimoto, K. Magari, K. Kishi, and Y. Kondo, "Extremely low power consumption semiconductor optical amplifier gate for WDM applications," Electron. Lett., vol. 33, no. 21, pp. 1791-1792, 1997.
4. N. Yoshimoto, Y. Shibata, S. Oku, S. Kondo, Y. Noguchi, K. Wakita, and M. Naganuma, "Fully polarization independent Mach-Zehnder optical switch using a lattice-matched InGaAlAs/InAlAs MQW and high-mesa waveguide structure," Electron. Lett., vol. 32, no. 15, pp. 1368-1369, 1996.
5. A. Godefroy, A. Le Corre, F. Clerot, S. Salaun, S. Loualiche, J. C. Simon, L. Henry, C. Vaudry, J. C. Keromnes, G. Joulie, and P. Lamouler, "1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer," IEEE Photon. Technol. Lett., vol. 7, pp. 473-475, May 1995.
6. L. F. Tiemeijer, P. J. A. Thijs, T. v. Dongen, J. J. M. Binsma, E. J. Jansen, and A. J. M. Verboven, "27-dB gain unidirectional 1300-nm polarization-insensitive multiple quantum well laser amplifier module," IEEE Photon. Technol. Lett., vol. 6, pp. 1430-1432, Dec. 1994.
7. K. Magari, M. Okamoto, and Y. Noguchi, "1.55-μm polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier," IEEE Photon. Technol. Lett., vol. 3, pp. 998-1000, 1991.
8. H. Sugiura, S. Kondo, M. Mitsuhara, S. Matsumoto, and M. Itoh, "Be-Zn interdiffusion and its influence on InGaAsP lasers fabricated by hybrid growth of chemical beam epitaxy and metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 70, no. 21, pp. 2846-2851, 1997.
9. Y. Kondo, K. Kishi, M. Itoh, H. Oohashi, Y. Itaya, and M. Yamamoto, "1.3 μm buried-heterostructure lasers using a CH4 reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy," in IPRM'96, Stadtgarten, Germany, Apr. 1996, pp. 384-387, paper TuB 2-3.