Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 19-25

  Kitatani, ^a   Taike, A ^a   Aoki, M ^a  

^a HITACHI LTD   (Japan)

Author keywords

A1. Critical strain; A1. Strain relaxation; B1. InGaAsP

Indexed keywords

CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRITICAL STRAIN; CRYSTAL SURFACES; INGAASP; STRAIN RELAXATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944221909     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.094     Document Type: Article

References (10)

1. E. Yablonovitch, O. Kane, J. Lightwave Technol. LT-4 (1986) 117.
2. A.R. Adams, Electron. Lett. 22 (1986) 249.
3. F.C. Franc, J.H. van der Merwe, Proc. Roy. Soc. A 189 (1949) 205.
4. J.W. Matthews, A.E. Blakeslee, J. Crystal Growth 27 (1974) 118.
5. R. People, J.C. Bean, Appl. Phys. Lett. 47 (1985) 322.
6. S.W. Ryu, H.D. Kim, S.K. Park, W.G. Jeong, B.D. Choc, Jpn. J. Appl. Phys. 36 (1997) L79.
7. J.P. Reithmaier, H. Cerve, R. Losch, Appl. Phys. Lett. 54 (1989) 48.
8. T.G. Andersson, Z.G. Chen, V.D. Kulskovskii, A. Uddin, T. Vallin, Appl. Phys. Lett. 51 (1987) 752.
9. P.M. Maree, J.C. Barbour, J.F. van der Veen, K.L. Kavanagh, C.W.T. Bulle-Lieuwma, M.P.A. Viegers, J. Appl. Phys. 62 (1987) 4413.
10. J.C. Mikkelsen, Jr., J.B. Boyce, Phys. Rev. Lett. 49 (1982) 1412.