An 84 GHz bandwidth and 20 dB gain broadband amplifier in SiGe bipolar technology

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 10, 2007, Pages 2099-2105

  Trotta, Saverio ^a,b,c,d   Knapp, Herbert ^a,b   Anfinger, Klaus ^b   Meister, Thomas F ^b   Böck, Josef ^b   Dehlink, Bernhard ^a,d   Simbürger, Werner ^b   Scholtz, Arpad L ^d  

^a IEEE

^b INFINEON TECHNOLOGIES AG   (Germany)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Broadband amplifier; SiGe

Indexed keywords

BANDWIDTH; BIPOLAR TRANSISTORS; ELECTRIC POWER UTILIZATION; GAIN MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS;

BIPOLAR TECHNOLOGY; GAIN BANDWIDTH PRODUCT (GBW); LUMPED BROADBAND AMPLIFIER;

BROADBAND AMPLIFIERS;

EID: 34748906518     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.905227     Document Type: Conference Paper

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