A 60 GHz broadband amplifier in SiGe bipolar technology

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 293-296

  Perndl, W ^a,b   Wilhelm, W ^b   Knapp, H ^b   Wurzer, M ^b   Aufinger, K ^b   Meister, T F ^b   Bock J ^b   Simburger W ^b   Scholtz, A L ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; DATA REDUCTION; ELECTRIC POTENTIAL; ELECTRON MOBILITY; EPITAXIAL GROWTH; HIGH ELECTRON MOBILITY TRANSISTORS; SIGNAL DETECTION; SILICON COMPOUNDS;

MAXIMUM DIFFERENTIAL OUTPUT; OSCILLATION FREQUENCY; SIGE BIPOLAR TECHNOLOGY; VOLTAGE SWING;

BROADBAND AMPLIFIERS;

EID: 17044429432     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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7. 11-l PRBS Generators in SiGe Bipolar Technology", accepted for 2004 IEEE Compound Semiconductor IC Symposium, Oct. 2004.