DC and RF performance of 0.2-0.4 μm gate length InAs/AlSb HEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2007, Pages 67-70

  Borg, Malin ^a   Lefebvre, Eric ^a   Malmkvist, Mikael ^a   Desplanque, Ludovic ^b   Wallart, Xavier ^b   Roelens, Yannick ^b   Dambrine, Gilles ^b   Cappy, Alain ^b   Bollaert, Sylvain ^b   Grahn, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; ELECTRIC CURRENTS; INDIUM ARSENIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; TRANSCONDUCTANCE;

CURRENT GAIN; EXTRINSIC MAXIMUM FREQUENCY; GATE LENGTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34748898341     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381124     Document Type: Conference Paper

References (6)

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2. th Int. Conf. IPRM, 2007.
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4. C.R. Bolognesi, M.W. Dvorak, and D.H. Chow, "Impact Ionization Suppression by Quantum Confinement: Effects on the DC and Microwave Performance of Narrow-Gap Channel InAs/AlSb HFET's", IEEE Trans. Electron Devices, vol. 46, pp. 826-832, May 1999.
5. th Int. Conf. IPRM, pp.219-222, 2003.
6. K. Shinohara, T. Matsui, T. Mimura, and S. Hiyamizu, "Novel Asymmetric Gate-Recess Engineering for Sub-Millimeter-Wave InP-based HEMTs", in Int. Microwave Symposium Digest, pp. 2159-2162, 2001.