A high-performance Ka-band monolithic variable-gain amplifier using dual-gate HEMT's

IEEE Microwave and Guided Wave Letters

Volumn 7, Issue 8, 1997, Pages 251-252

  Kashiwa, Takuo ^a,b   Katoh, Takayuki ^a   Ishida, Takao ^a   Kojima, Yoshiki ^a   Mitsui, Yasuo ^a,b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b IEEE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

NOISE FIGURE; VARIABLE GAIN AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 0031210009     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.605494     Document Type: Article

References (9)

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