Broadband dual-gate balanced low noise amplifiers

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2006, Pages 169-172

  Deal, W R ^a   Biedenbender, M ^a   Liu, P H ^a   Namba, C ^a   Chen, S ^a   Sergant, M ^a   Uyeda, J ^a   Siddiqui, M ^a   Lai, R ^a   Allen, B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Balanced amplifier; Dual gate; HEMT; Low noise amplifier

Indexed keywords

BALANCED AMPLIFIERS; COMPOUND SEMICONDUCTOR (CS); DIFFERENT FREQUENCIES; LOW NOISE; NOISE PERFORMANCES; SINGLE STAGE; SOURCE DEVICE (SDEV);

EID: 34748901998     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2006.319888     Document Type: Conference Paper

References (4)

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2. T. Kashiwa, T. Kato, T. Ishida, Y. Kojima, Y. Mitsui,"A high-performance Ka-band monolithic variable-gain amplifeir using dual-gate HEMTs," IEEE Micwoave and Guided Wave Letters, Volume 7, Issue 8, Aug. 1997 pp. 251-252
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4. A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, "Metamorphic 94 GHz power amplifier MMICs," IEEE MTT-S Interantional Microwave Symposium Digest, June 12-17th, 2005.