Extraction of self-heating free I-V curves including the substrate current of PD SQI MOSFETs

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2007, Pages 272-275

  Chen, Qiarig ^a   Wu, Zhi Yuan ^a   Su, Richard Y K ^a   Goo, Jung Suk ^a   Thuruthiyil, Ciby ^a   Radwin, Martin ^a   Subba, Niraj ^a   Suryagandh, Sushant ^a   Ly, Tran ^a   Wason, Vineet ^a   An, Judy X ^a   Icel, Ali B ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

Compact modeling; Self heating; SOI; Substrate current

Indexed keywords

MATHEMATICAL MODELS; MOSFET DEVICES; PARAMETER EXTRACTION; SILICON ON INSULATOR TECHNOLOGY; SPICE;

COMPACT MODELING; SELF-HEATING; SUBSTRATE CURRENT; TEMPERATURE DEPENDENCES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 34548831954     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2007.374498     Document Type: Conference Paper

References (10)

1. K. Bernstein and N.J. Rohrer, SOI circuit design concepts, Kluwer Academic Publishers, 1999.
2. P. Su, S.K.H. Fung, S. Tang, F. Assaderaghi, and C. Hu, "BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs," in Proc. IEEE CICC, 2000, pp. 197-200.
3. K. A. Jenkins and J.Y.-C. Sun, "Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating," IEEE EDL, vol. 16, pp. 145-147, 1995.
4. Bill Verzi, 10ns pulsed IV characterization of SOI and high-k transistors, Agilent, July 2006 http://semihar2.tech.onlihe.eom/s/ agilentjul2506.
5. K.A. Jenkins, J.Y.-C. Sun, and J. Gautier, "Characteristics of SOI FET's under pulsed conditions," IEEE T-ED, vol. 44, pp. 1923-1930, 1997.
6. P. Su, K. Goto, T. Sugii, and C. Hu, "Self-heating enhanced impact ionization in SOI MOSFETs," in Proc. IEEE Int. SOl Conf.,2001, pp. 31-32.
7. H. Nakayama, P. Su, C. Hu, M. Nakamura, H. Komatsu, K. Takeshita, and Y. Komatsu, "Methodology of self-heating free parameter extraction and circuit simulation for SOI CMOS,:" in Proc. IEEE GICC, 200.1, pp. 381-384.
8. L.T. Su, J.E. Chung, D.A. Antoniadis, K.E. Goodson, and M.I. Flik, "Measurement and modeling of self-heating in SOI NMOSFET's," IEEE T-ED,vol. 41, pp. 69-75, 1994.
9. N.G. Einspruch and .G-. Gildenblat, Advanced MOS.device physics-VLSI Electronics. Microstructure Science, vol. 18, p. 225, Academic Press Inc., 1989.
10. K.K. Young.and J.A. Burns, "Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFET's," IEEE T-ED, vol. .35, pp. 426-431, 1988.