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Volumn , Issue , 2000, Pages 197-200

BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; IMPACT IONIZATION; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

EID: 0033698080     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (36)

References (7)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.