Atomistic simulation on the phase transformation of silicon under nonhydrostatic stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5924-5929

  Jeong, Seong Min ^a   Kitamura, Takayuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Atomistic simulation; Nonhydrostatic stress; Phase transformation; Silicon; The Tersoff potential

Indexed keywords

CRYSTAL ORIENTATION; PHASE TRANSITIONS; STRESS ANALYSIS;

ATOMISTIC SIMULATION; NONHYDROSTATIC STRESS; THE TERSOFF POTENTIAL;

SILICON;

EID: 34548729227     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5924     Document Type: Article

References (30)

1. C. Jamieson: Science 139 (1963) 762.
2. C. Jamieson: Science 139 (1963) 845.
3. G. J. Piermanrini and S. Block: Rev. Sci. Instrum. 46 (1975) 973.
4. B. A. Weinstein and G. J. Permarini: Phys. Rev. B 12 (1975) 1172.
5. J. Z. Hu and I. L. Spain: Solid State Commun. 51 (1984) 263.
6. A. George: in Properties of Crystalline Silicon, ed. R. Hull (Inspec, London, 1999) p. 104.
7. D. R. Clarke, M. C. Kirchener, R. F. Cook, and B. J. Hockey: Phys. Rev. Lett. 60 (1988) 2156.
8. A. Kailer, Y. G. Gogotsi, and K. G. Nickel: J. Appl. Phys. 81 (1997) 3057.
9. Y. G. Gogotsi, V. Domnich, S. N. Dub, A. Kailer, and K. G. Nickel: J. Mater. Res. 15 (2000) 871.
10. V. Domnich, Y. G. Gogotsi, and S. N. Dub: Appl. Phys. Lett. 76 (2000) 2214.
11. Y. G. Gogotsi, A. Kailer, and K. G. Nickel: Mater. Res. Innovations 1 (1997) 3.
12. I. Zarudi, J. Zou, and L. C. Zhang: Appl. Rhys. Lett. 82 (2003) 874.
13. I. Zarudi. and L. C. Zhang: Tribol. Int. 32 (1999) 701.
14. I. Zarudi, L. C. Zhang, W. C. D. Cheong, and T. X. Yu: Acta Mater. 53 (2005) 4795.
15. S.-M. Jeong, H.-S. Oh, S.-E. Park, and H.-L. Lee: Jpn. J. Appl. Phys. 42 (2003) 2773.
16. B. V. Tanikella, A. H. Somasekhar, A. T. Sowers, R. J. Nemanich, and R. O. Scattergood: Appl. Phys. Lett. 69 (1996) 2870.
17. J. Z. Hu, L. D. Merkle, C. S. Menoni, and I. L. Spain: Phys. Rev. B 34 (1986) 4679.
18. M. C. Gupta and A. L. Ruoff: J. Appl. Phys. 51 (1980) 1072.
19. T. Yin and M. L. Cohen: Phys. Rev. B 26 (1982) 5668.
20. R. J. Needs and A. Mujica: Phys. Rev. B 51 (1995) 9652.
21. A. Mujica, S. Radescu, A. Munoz, and R. J. Needs: Phys. Status Solidi B 223 (2001) 379.
22. C. Cheng, W. H. Huang, and H. J. Li: Phys. Rev. B 63 (2001) 153202.
23. K. Gaál-Nagy and D. Strauch: Phys. Rev. B 73 (2006) 134101.
24. J. Tersoff: Phys. Rev. B 37 (1988) 6991.
25. K. Mizushima, S. Yip, and E. Kaxiras: Phys. Rev. B 50 (1994) 14952.
26. L-H. Lee, J.-W. Jeong, and K. J. Chang: Phys. Rev. B 55 (1997) 5689.
27. W. C. D. Cheong and L. C. Zhang: Nanotechnology 11 (2000) 173.
28. C. F. Sanz-Navarro, S. D. Kenny, and R. Smith: Nanotechnology 15 (2004) 692.
29. Y. Umeno, A. Kushima, T. Kitamura, P. Gumbsch, and J. Li: Phys. Rev. B 72 (2005) 165431.
30. M. Durandurdu and D. A. Drabold: Phys. Rev. B 67 (2003) 212101.