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Volumn 43, Issue 4 B, 2004, Pages 2211-2216
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Data retention improvement of metal-oxide-nitride-oxide-semiconductor memories using silicon-tetrachloride-based silicon nitride with ultralow Si-H bond density
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Author keywords
Data retention; MONOS; Si H bonds; Silicon nitride; Silicon tetrachloride
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
CHEMICAL BONDS;
CHEMICAL VAPOR DEPOSITION;
DEUTERIUM;
ELECTRON TRAPS;
ELECTRON TUNNELING;
MOS DEVICES;
SEMICONDUCTING FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON NITRIDE;
THRESHOLD VOLTAGE;
TRANSISTORS;
DATA RETENTION;
METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR (MONOS) MEMORIES;
SI-H BONDS;
SILICON TETRACHLORIDE;
SEMICONDUCTOR STORAGE;
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EID: 3142575074
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.2211 Document Type: Conference Paper |
Times cited : (2)
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References (15)
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