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Volumn 43, Issue 4 B, 2004, Pages 2211-2216

Data retention improvement of metal-oxide-nitride-oxide-semiconductor memories using silicon-tetrachloride-based silicon nitride with ultralow Si-H bond density

Author keywords

Data retention; MONOS; Si H bonds; Silicon nitride; Silicon tetrachloride

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DEUTERIUM; ELECTRON TRAPS; ELECTRON TUNNELING; MOS DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THRESHOLD VOLTAGE; TRANSISTORS;

EID: 3142575074     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2211     Document Type: Conference Paper
Times cited : (2)

References (15)
  • 12
    • 3142623629 scopus 로고    scopus 로고
    • note
    • th.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.