Characterization and modelling of ageing failures on power MOSFET devices

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1735-1740

  Khong, B ^a   Legros, M ^a   Tounsi, P ^b   Dupuy, Ph ^c   Chauffleur, X ^d   Levade, C ^a   Vanderschaeve, G ^a   Scheid, E ^b  

^a CEMES CNRS   (France)

^b LAAS CNRS   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d Epsilon Ingénierie ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; ALUMINUM; DELAMINATION; ELECTRON MICROSCOPY; FAILURE ANALYSIS; METALLIZING;

AGING MODELS; ELECTRICAL OVER STRESSES (EOS); ION MICROSCOPY;

MOSFET DEVICES;

EID: 34548692772     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.055     Document Type: Article

References (12)

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