Assessment of the Trench IGBT reliability: Low temperature experimental characterization

Microelectronics Reliability

Volumn 45, Issue 9-11, 2005, Pages 1700-1705

  Azzopardi, S ^a   Benmansour, A ^a   Ishiko, M ^b   Woirgard, E ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; LOW TEMPERATURE EFFECTS; WAVEFORM ANALYSIS;

DYNAMIC OPERATIONS; GATE RESISTANCE; INTENSIVE MEASUREMENTS; VOLTAGE WAVEFORMS;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 24144461658     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.07.086     Document Type: Conference Paper

References (11)

1. J.P. Russel The COMFET - a new high conductance MOS-Gated device IEEE Electron Devices Letters 4 March 1983 63 65
2. Baliga BJ et al. The insulated gate transistor: A new three-terminal MOS controlled bipolar power device. IEEE Trans. on Electron Devices 1984;31(6)(June):821-8.
3. M. Trivedi, and K. Shenai Trade-off in IGBT safe operating area and performance parameters Proc. of the IEEE IAS 1997 949 954
4. C.V. Godbold Temperature variation effects in MCTs, IGBTs, and BMFETs Proc. of the Power Electronics Specialists Conference 20-24 June 1993 93 98
5. Chow TP et al. Operation of IGBT's at low temperatures. Proc. of the IEEE International Symposium on Power Semiconductor Devices and ICs 1992(April):226-8.
6. T.P. Chow Performances of 600 V n channel IGBTs at low temperature IEEE Electron Devices Letters 12 Sepetmber 1991 498 499
7. J.L. Hudgins Temperature variation effects on the switching characteristics of MOS-Gate devices Proc. EPE-MAPED Conf. Rec September 1991 262 266
8. Santi E et al. Temperature effects on trench-gate punch-through IGBTs. IEEE Transactions on Industry Applications 2004;40(2)(March-April):472-82.
9. Azzopardi S et al. A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures. IEEE Transactions on Power Electronics 2004;19(1)(January):231-41.
10. Jayant Baliga B. Power Semiconductor Devices, PWS, 1996.
11. Azzopardi S, et al. Characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load under extensive measurements without freewheeling diode reverse recovery influence, Proc. of the International Power Electronics Congress 2000, 15-19 (October) 2000, pp. 249-256.