Brewster-angle analysis of native and photoelectrochemically grown silicon oxide nanotopographies

Surface Science

Volumn 601, Issue 18, 2007, Pages 4227-4231

  Lublow, M ^a   Lewerenz, H J ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Atomic force microscopy; Electrochemical phenomena; In situ characterization; Oxidation; Reflection spectroscopy; Semiconductor insulator interfaces; Silicon; Silicon oxides

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROCHEMISTRY; GROWTH (MATERIALS); OXIDATION; PHOTOCURRENTS; REFLECTOMETERS; SEMICONDUCTOR INSULATOR BOUNDARIES; TOPOGRAPHY;

BREWSTER ANGLE REFLECTOMETRY (BAR); NANOTOPOGRAPHIES; REFLECTION SPECTROSCOPY; SEMICONDUCTOR INSULATOR INTERFACES;

SILICA;

EID: 34548639594     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.108     Document Type: Article

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