Influence of confined acoustic phonons on the electron mobility in ultrathin silicon-on-insulator layers

Proceedings - Electrochemical Society

Volumn PV 2005-03, Issue , 2005, Pages 39-44

  Gamiz, F ^a   Cartujo Cassinello, P ^a   Roldan J B ^a   Sampedro, C ^a   Godoy, A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; ELECTRON SCATTERING; SILICON ON INSULATOR TECHNOLOGY; SIMULATORS;

ACOUSTIC PHONONS; INSULATOR INVERSION; ULTRATHIN SILICON;

PHONONS;

EID: 31844448496     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G. K. Celler and S. Cristoloveanu, J App Phys., 93, 4955 (2003).
2. F.Gamiz, M.V.Fischetti, J.Appl.Phys., 89, 5478 (2001)
3. C M Sotomayor Torres, A. Zwick, F. Poinsotte, J. Groenen, M. Prunilla, J. Ahopelto, A. Mlayah and V. Paillard, phys stat sol (c), 1, 2609 (2004)
4. F.Gámiz, J.B.Roldán, P.Cartujo-Cassinello, J.E.Carceller, J.A.López-Villanueva, and S.Rodriguez, J.Appl.Phys., 86, 6269 (1999).
5. D.Esseni et al., Trans. on Elect. Dev., 48, 2842 (2001)
6. K. Uchida, and S. Takagi, Appl.Phys.Lett., 82, 2916 (2003)
7. B.R.Nag, S.Gangopadhyay, Semicond.Scie.Technol., 10, 813 (1995)