Dopant position in Ti-doped high-temperature phase Ta2 O5: First principles study

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Zhang, R Z ^a   Wang, C L ^a   Li, J C ^a   Zhang, J L ^a   Yang, K ^a   Zhang, C ^a   Chen, H M ^b  

^a SHANDONG UNIVERSITY   (China)

^b University of Changji   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; TITANIUM;

HIGH-TEMPERATURE PHASE; OXYGEN DECAHEDRAL;

TANTALUM COMPOUNDS;

EID: 34548412759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2775324     Document Type: Article

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