메뉴 건너뛰기




Volumn , Issue , 2007, Pages 323-340

All quantum simulation of ultrathin SOI MOSFETs

Author keywords

Nanometer field effect transistor; Quantum simulation

Indexed keywords


EID: 34548407862     PISSN: 18714668     EISSN: None     Source Type: Book Series    
DOI: 10.1007/978-1-4020-6380-0_21     Document Type: Conference Paper
Times cited : (6)

References (21)
  • 3
    • 3543127844 scopus 로고    scopus 로고
    • Computer Simulation of a nanoscale ballistic SOI MOSFET with a sub-10-nm Si layer
    • V'yurkov V. V., Orlikovsky A. A., and Sidorov A. A. 2003. Computer Simulation of a nanoscale ballistic SOI MOSFET with a sub-10-nm Si layer. Russian Microelectronics 32: 224-232.
    • (2003) Russian Microelectronics , vol.32 , pp. 224-232
    • V'yurkov, V.V.1    Orlikovsky, A.A.2    Sidorov, A.A.3
  • 4
    • 85054396782 scopus 로고    scopus 로고
    • Ernst T., Munteanu D. et al. 1999. Ultimately thin SOI MOSFETs: Special characteristics and mechanism, in: Proc. IEEE Int. SOI Conf., Rohnert Park (California, USA), oct. 1999.
    • Ernst T., Munteanu D. et al. 1999. Ultimately thin SOI MOSFETs: Special characteristics and mechanism, in: Proc. IEEE Int. SOI Conf., Rohnert Park (California, USA), oct. 1999.
  • 5
    • 0033906208 scopus 로고    scopus 로고
    • Properties of extremely thin silicon layer in silicon-on-insulator structure
    • Popov V. P., Antonova I. V., Stas V. F. et al. 2000. Properties of extremely thin silicon layer in silicon-on-insulator structure. J. Mater. Sci. Eng. B73: 82-86.
    • (2000) J. Mater. Sci. Eng , vol.B73 , pp. 82-86
    • Popov, V.P.1    Antonova, I.V.2    Stas, V.F.3
  • 6
    • 0037621572 scopus 로고    scopus 로고
    • Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide- semiconductor field-effect transistors
    • Uchida K. and Takagi S. 2003. Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal-oxide- semiconductor field-effect transistors. Appl. Phys. Lett. 82: 2916-2918.
    • (2003) Appl. Phys. Lett , vol.82 , pp. 2916-2918
    • Uchida, K.1    Takagi, S.2
  • 7
    • 33746038151 scopus 로고    scopus 로고
    • Surface scattering in SOI field-effect transistor
    • Ananiev S. D., V'yurkov V. V., and Lukichev V. F. 2006. Surface scattering in SOI field-effect transistor, in: Proc. SPIE, 6260:0O-1-8.
    • (2006) Proc. SPIE , vol.6260
    • Ananiev, S.D.1    V'yurkov, V.V.2    Lukichev, V.F.3
  • 8
    • 0037560886 scopus 로고    scopus 로고
    • A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode
    • Shifren L., Ringhofer C., and Ferry D. K. 2003. A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode. IEEE Trans. El. Devices 50: 769.
    • (2003) IEEE Trans. El. Devices , vol.50 , pp. 769
    • Shifren, L.1    Ringhofer, C.2    Ferry, D.K.3
  • 9
    • 0001766480 scopus 로고    scopus 로고
    • Quantum transport of electrons in open nano structures with the Wigner-function formalism
    • Bordone P., Pascoli M., Brunetti R., Bertoni A., and Jacoboni C. 1998. Quantum transport of electrons in open nano structures with the Wigner-function formalism. Phys. Rev. B. 59: 3060.
    • (1998) Phys. Rev. B , vol.59 , pp. 3060
    • Bordone, P.1    Pascoli, M.2    Brunetti, R.3    Bertoni, A.4    Jacoboni, C.5
  • 10
    • 0038341883 scopus 로고    scopus 로고
    • Efficient method for calculation of ballistic quantum transport
    • Mamaluy D., Sabathil M., and Vogl P. 2003. Efficient method for calculation of ballistic quantum transport. J. Appl. Phys. 93: 4628.
    • (2003) J. Appl. Phys , vol.93 , pp. 4628
    • Mamaluy, D.1    Sabathil, M.2    Vogl, P.3
  • 11
    • 0342723158 scopus 로고    scopus 로고
    • Single and multiband modeling of quantum electron transport through layered semiconductor devices
    • Lake R., Klimeck G., Bowen R. C., and Javanovic D. 1997. Single and multiband modeling of quantum electron transport through layered semiconductor devices. J. Appl. Phys. 81: 7845.
    • (1997) J. Appl. Phys , vol.81 , pp. 7845
    • Lake, R.1    Klimeck, G.2    Bowen, R.C.3    Javanovic, D.4
  • 12
    • 0005285906 scopus 로고    scopus 로고
    • Quantum transport in mesoscopic devices: Current conduction in quantum wire structures
    • Hake A. and Khondker A. N. 2000. Quantum transport in mesoscopic devices: Current conduction in quantum wire structures. J. Appl. Phys. 87: 2553.
    • (2000) J. Appl. Phys , vol.87 , pp. 2553
    • Hake, A.1    Khondker, A.N.2
  • 13
    • 0001320219 scopus 로고    scopus 로고
    • Master-equation approach to the study of electronic transport in small semiconductor devices
    • Fischetti M. V. 1998. Master-equation approach to the study of electronic transport in small semiconductor devices. Phys. Rev. B 59: 4901.
    • (1998) Phys. Rev. B , vol.59 , pp. 4901
    • Fischetti, M.V.1
  • 14
    • 0037648693 scopus 로고    scopus 로고
    • A simple quantum mechanical treatment of scattering in nanoscale transistors
    • Venugopal R., Paulsson M., Goasguen S., Datta S., and Lundstrom M. S. 2003. A simple quantum mechanical treatment of scattering in nanoscale transistors. J. Appl. Phys. 93: 5613.
    • (2003) J. Appl. Phys , vol.93 , pp. 5613
    • Venugopal, R.1    Paulsson, M.2    Goasguen, S.3    Datta, S.4    Lundstrom, M.S.5
  • 15
    • 0043269760 scopus 로고    scopus 로고
    • Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field effect transistor
    • Jimenez D., Saenz J.J., Iniquez B. et al. 2003. Unified compact model for the ballistic quantum wire and quantum well metal-oxide-semiconductor field effect transistor. J. Appl. Phys. 94: 1061.
    • (2003) J. Appl. Phys , vol.94 , pp. 1061
    • Jimenez, D.1    Saenz, J.J.2    Iniquez, B.3
  • 16
    • 0002662487 scopus 로고
    • Transport as a Consequence of the Incident Carrier flux
    • G.Bergmann and Y. Buynseraede, Eds, Springer-Verlag, Heidelberg, P
    • Landauer R. 1985. Transport as a Consequence of the Incident Carrier flux, in Localization, Interaction, and Transport Phenomena, G.Bergmann and Y. Buynseraede, Eds., Springer-Verlag, Heidelberg, P. 38.
    • (1985) Localization, Interaction, and Transport Phenomena , pp. 38
    • Landauer, R.1
  • 17
    • 0024014552 scopus 로고
    • Symmetry of electrical conduction
    • Buttiker M. 1988. Symmetry of electrical conduction. IBM J. Res. Dev. 32: 317.
    • (1988) IBM J. Res. Dev , vol.32 , pp. 317
    • Buttiker, M.1
  • 18
    • 3142637440 scopus 로고    scopus 로고
    • Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide- semiconductor field-effecttransistors
    • Gilbert M. J. and Ferry D. K. 2004. Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide- semiconductor field-effecttransistors. J. Appl. Phys. 95: 7954-7960.
    • (2004) J. Appl. Phys , vol.95 , pp. 7954-7960
    • Gilbert, M.J.1    Ferry, D.K.2
  • 19
    • 0942300861 scopus 로고    scopus 로고
    • Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors
    • Venugopal R., Goasguen S., Datta S., and Lundstrom M.S. 2004. Quantum mechanical analysis of channel access geometry and series resistance in nanoscale transistors. J. Appl. Phys. 95: 292.
    • (2004) J. Appl. Phys , vol.95 , pp. 292
    • Venugopal, R.1    Goasguen, S.2    Datta, S.3    Lundstrom, M.S.4
  • 20
    • 1542788027 scopus 로고
    • edited by E. Burstein and S. Lundqvist (Plenum, New York) p
    • Kane E. O. 1969. Tunneling Phenomena in Solids, edited by E. Burstein and S. Lundqvist (Plenum, New York) p. 1.
    • (1969) Tunneling Phenomena in Solids , pp. 1
    • Kane, E.O.1
  • 21
    • 0001408709 scopus 로고
    • Reduced Hamiltonian method for solving the tight-binding model of interfaces
    • Schulman J. N. and Chang Y. C. 1983. Reduced Hamiltonian method for solving the tight-binding model of interfaces. Phys. Rev. B. 27: 2346.
    • (1983) Phys. Rev. B , vol.27 , pp. 2346
    • Schulman, J.N.1    Chang, Y.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.