Cell sensing margin of lead-free (Bi,La)4Ti3O 12 thin film deposited on MTP cell structure in high density FeRAM device

Materials Science Forum

Volumn 510-511, Issue , 2006, Pages 530-533

  Choi, J H ^a   Yoo, H S ^a   Cho, K W ^a   Kim, N K ^b   Oh, S H ^b   Choi, E S ^b   Yeom, S J ^b   Sun, H J ^c   Lee, S S ^b   Lee, K N ^b   Hong, S K ^b   Hong, T W ^a   Kim, I H ^a   Ryu, S L ^a   Kweon, S Y ^a  

^a Chungju National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Kunsan National University   (South Korea)

Author keywords

Cell sensing margin; FeRAM; Ferroelectric properties; Lead free

Indexed keywords

ELECTRODEPOSITION; ELECTRONIC STRUCTURE; FERROELECTRICITY; POLARIZATION; RANDOM ACCESS STORAGE;

CELL SENSING MARGINS; CELL STRUCTURE; FERROELECTRIC PROPERTIES; SWITCHABLE POLARIZATION;

THIN FILMS;

EID: 34548343649     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-995-4.530     Document Type: Conference Paper

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