Ferroelectric properties of lead-free (Bi,La)4Ti 3O12 thin film deposited on MTP cell structure for high density FeRAM device

Materials Science Forum

Volumn 486-487, Issue , 2005, Pages 285-288

  Cho, K W ^a   Kim, N K ^b   Oh, S H ^b   Choi, E S ^b   Sun, H J ^b   Yeom, S J ^b   Lee, K N ^b   Lee, S S ^b   Hong, S K ^b   Choi, S K ^c   Hong, T W ^a   Kim, I H ^a   Lee, J I ^a   Ur, S C ^a   Lee, Y G ^a   Ryu, S L ^a   Kweon, S Y ^a  

^a Chungju National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

FeRAM; Ferroelectric properties; Lead free; MTP cell structure

Indexed keywords

DENSITY (OPTICAL); FATIGUE OF MATERIALS; FERROELECTRICITY; FILM THICKNESS; RANDOM ACCESS STORAGE; SOL-GEL PROCESS;

CELL STRUCTURE; FATIGUE LOSS; FERROELECTRIC PROPERTIES; OPERATING TEMPERATURES;

THIN FILMS;

EID: 35148839580     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-966-0.285     Document Type: Conference Paper

References (4)

1. S.Y. Lee and Kinam Kim, IEDM Tech. Dig., pp547-550, 2002.
2. B. Yang, et al., IEDL, Vol. 23, No. 12, 2002.
3. S. Y. Kweon, et al., Jpn. J. Appl. Phys., vol. 41, pp. 7327-7331, 2002.
4. B. Yang, et al., Jpn. J. Appl. Phys., vol. 42, pp. 1327-1330, 2003.