Initial growth stage of InTaO4 films deposited on MgO(0 0 1) substrates together with assisting O2-ion-beam by Ar-ion-beam sputtering of Ta target partly covered with In sheets

Vacuum

Volumn 82, Issue 1, 2007, Pages 95-99

  Kawakami, Hajime ^a   Maki, Kunisuke ^a  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

Author keywords

Ar ion beam sputtering; Assisting O2 ion beam; InTao4; Re evaporation effect

Indexed keywords

FILM GROWTH; INDIUM COMPOUNDS; ION BEAMS; MAGNESIA; SPUTTERING; X RAY DIFFRACTION;

AR-ION-BEAM SPUTTERING; CRITICAL THICKNESS; MONOCLINIC STRUCTURE; RE-EVAPORATION EFFECT; X-RAY PHOTOEMISSION SPECTROSCOPY;

THIN FILMS;

EID: 34548336800     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.04.038     Document Type: Article

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