Effect of dislocations on VLWIR HgCdTe photodiodes

Journal of Electronic Materials

Volumn 36, Issue 8, 2007, Pages 1068-1076

  Parodos, T ^a   Fitzgerald, E A ^b   Caster, A ^a   Tobin, S ^a   Marciniec, J ^a   Welsch, J ^a   Hairston, A ^a   Lamarre, P ^a   Riendeau, J ^a   Woodward, B ^a   Hu, S ^a   Reine, M ^a   Lovecchio, P ^a  

^a BAE SYSTEMS   (United States)

^b Massachusetts Institute of Technology   (United States)

Author keywords

Dislocations; EPD; HgCdTe; LPE; Misfit; Photodiode; VLWIR

Indexed keywords

CUTOFF WAVELENGTH; ETCH PIT DENSITY (EPD); PASSIVATION LAYERS;

DISLOCATIONS (CRYSTALS); FOCAL PLANE ARRAYS; INFRARED DETECTORS; LIGHTING; MERCURY COMPOUNDS;

PHOTODIODES;

EID: 34548285433     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0173-x     Document Type: Conference Paper

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