Impact of critical processes on HgCdTe diode performance and yield

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 588-591

  Figgemeier, Heinrich ^a   Bruder, Martin ^a   Mahlein, Karl Martin ^a   Wollrab, Richard ^a   Ziegler, Johann ^a  

^a AIM INFRAROT MODULE GMBH   (Germany)

Author keywords

Bridgman growth; CdZnTe; Device processing; Diode yield; Dislocations; Etch pit density; HgCdTe; Infrared focal plane array; Ion beam etching; Liquid phase epitaxy

Indexed keywords

EPITAXIAL GROWTH; ETCHING; ION BEAMS; MERCURY COMPOUNDS; PHOTOVOLTAIC EFFECTS;

CRITICAL PROCESSES;

DIODES;

EID: 0043269258     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0037-y     Document Type: Conference Paper

References (3)

1. M. Bruder, H. Figgemeier, L. Palm, J. Ziegler, and H. Maier, SPIE Conf. 2554 (1995), p. 137.
2. R.S. List, J. Electron. Mater. 22 (1993), p. 1017.
3. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Peterson, S.M. Taylor, and M.E. Boyd, J. Vac. Sci. Technol. B 10 (1992).