A technique to predict gate oxide reliability using fast on-line ramped QBD testing

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 292-297

  Mullen, Ed ^a   Leveugle, Claire ^a   Molyneaux, James ^a   Prendergast, James ^a   Suehle, John S ^a  

^a ANALOG DEVICES   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; RELIABILITY THEORY; VOLTAGE MEASUREMENT;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036089150     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. BD tests to TDDB Life tests for ultra-thin gate oxides
2. The sensitivity and correlation study on jramp test and high-field constant-voltage stress test for WLR
3. 2
4. 2 films with bimodal failure populations
5. Tutorial on dielectric breakdown
6. 2 films and model integration into the design phase
7. Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures
8. Detecting breakdown in ultra-thin dielectrics using a fast voltage ramp