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Volumn 76, Issue 8, 2007, Pages

Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

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EID: 34548276070     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.76.085431     Document Type: Article
Times cited : (30)

References (33)
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    • Note that PLD with this range of kinetic energy is referred to as PLD-LE in Ref..
    • Note that PLD with this range of kinetic energy is referred to as PLD-LE in Ref..
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    • The flux on the sample in RHEED is ∼3× 1014 cm2 s. Assuming a vacancy creation yield of 1× 10-4 per incident 15 keV electron, compared with a yield reported in Ref. of 1× 10-5 for 2 keV electrons on Si(111), we estimate that 1× 10-5 ML of vacancies are created per second while 0.2 ML is deposited per second.
    • The flux on the sample in RHEED is ∼3× 1014 cm2 s. Assuming a vacancy creation yield of 1× 10-4 per incident 15 keV electron, compared with a yield reported in Ref. of 1× 10-5 for 2 keV electrons on Si(111), we estimate that 1× 10-5 ML of vacancies are created per second while 0.2 ML is deposited per second.
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    • It was shown that in SrTi O3 homoepitaxy by PLD faster nonthermal transport dominates over slower thermal transport at 650°C. See Ref..
    • It was shown that in SrTi O3 homoepitaxy by PLD faster nonthermal transport dominates over slower thermal transport at 650°C. See Ref..
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