Characteristics of Ti -capped Co films deposited by a remote plasma ALD method using cyclopentadienylcobalt dicarbonyl

Journal of the Electrochemical Society

Volumn 154, Issue 10, 2007, Pages

  Lee, Keunwoo ^a   Kim, Keunjun ^a   Park, Taeyong ^a   Jeon, Hyeongtag ^a   Lee, Youngjin ^b   Kim, Jeongtae ^b   Yeom, Seungjin ^b  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; IN SITU PROCESSING; THIN FILMS; TITANIUM COMPOUNDS;

CARBON CONTENT; EX SITU ANNEALING; FORMATION TEMPERATURE; INTERFACE MORPHOLOGIES;

COBALT COMPOUNDS;

EID: 34548275582     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2769327     Document Type: Article

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