Silicides as contact material for DRAM applications

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 460-466

  Fitz, C ^a   Goldbach, M ^a   Dupont, A ^a   Schmidbauer, S ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Contact resistance; CoSi; DRAM; Leakage; NiSi; TiSi

Indexed keywords

COBALT COMPOUNDS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; NICKEL COMPOUNDS;

CONTACT RESISTANCE; COSI; LEAKAGE; NISI; TISI;

TITANIUM COMPOUNDS;

EID: 28044433204     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.043     Document Type: Conference Paper

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