RF PECVD characteristics for the growth of carbon nanotubes in a CH4-N2 mixed gas

IEEE Transactions on Plasma Science

Volumn 35, Issue 4 II, 2007, Pages 1027-1032

  Yuji, Toshifumi ^a,b   Sung, Youl Moon ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b HIROSHIMA NATIONAL COLLEGE OF MARITIME TECHNOLOGY   (Japan)

^c Kyungsung University   (South Korea)

Author keywords

Capacitively coupled plasma (CCP); Carbon nanotubes (CNTs); Inductively coupled plasma (ICP); Plasma enhanced chemical vapor deposition (PECVD); Single chamber process

Indexed keywords

CATALYSTS; INDUCTIVELY COUPLED PLASMA; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPUTTER DEPOSITION;

CAPACITIVELY COUPLED PLASMA (CCP); SINGLE CHAMBER PROCESS;

CARBON NANOTUBES;

EID: 34548219973     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2007.896753     Document Type: Conference Paper

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