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Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 348-353
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Electrical properties of an epitaxial Si film prepared by RF magnetron plasma at low temperature
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Author keywords
Electron density; Electron temperature; RF magnetron sputtering; Si epitaxy
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Indexed keywords
CARRIER CONCENTRATION;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLOGRAPHY;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
ELECTRON CYCLOTRON RESONANCE;
LOW TEMPERATURE EFFECTS;
MAGNETRON SPUTTERING;
MOLECULAR BEAM EPITAXY;
SILICON;
SINGLE CRYSTALS;
ELECTRON TEMPERATURE;
HIGH-PERFORMANCE SI DEVICES;
RF MAGNETRON SPUTTERING;
SI EPITAXY;
THIN FILMS;
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EID: 13444267547
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.07.037 Document Type: Conference Paper |
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Times cited : (6)
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References (9)
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