Characterization of the anisotropic etching of silicon in two-component alkaline solution

Journal of Micromechanics and Microengineering

Volumn 17, Issue 9, 2007, Pages 1916-1922

  Vazsonyi E ^a   Ducso Cs ^a   Pekker, A ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; CRYSTALLOGRAPHY; PASSIVATION; SILICON; SILICON WAFERS; WET ETCHING;

ETCH RATE; OXIDATION SITES; TEMPERATURE DEPENDENCE;

CRYSTALLINE MATERIALS;

EID: 34548208719     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/17/9/021     Document Type: Article

References (16)

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