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Volumn 55, Issue 16, 2007, Pages 5515-5525
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Mechanical properties of undoped GaAs. II: The brittle-to-ductile transition temperature
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Author keywords
Bending test; Dislocation structure; GaAs; Semiconductor compound
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Indexed keywords
BENDING TESTS;
CRACK PROPAGATION;
DISLOCATIONS (CRYSTALS);
SEMICONDUCTOR DOPING;
STRAIN RATE;
SUPERCONDUCTING TRANSITION TEMPERATURE;
COMPRESSION EXPERIMENTS;
DISLOCATION STRUCTURES;
SEMICONDUCTOR COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 34548122762
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2007.06.026 Document Type: Article |
Times cited : (18)
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References (33)
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