Mechanical properties of undoped GaAs. Part I: Yield stress measurements

Acta Materialia

Volumn 55, Issue 16, 2007, Pages 5500-5514

  Wang, Shanling ^a   Pirouz, Pirouz ^a  

^a Case Western Reserve University   (United States)

Author keywords

Compression test; Dislocation structure; GaAs; Semiconductor compound; Yield stress

Indexed keywords

COMPRESSION TESTING; FRACTURE MECHANICS; HYDROSTATIC PRESSURE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; YIELD STRESS;

DISLOCATION STRUCTURES; FRACTURE PROPERTIES; SEMICONDUCTOR COMPOUNDS; UNDOPED SINGLE CRYSTALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34548127552     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.06.008     Document Type: Article

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