Effect of a Fe3Si buffer layer for the growth of semiconducting β-FeSi2 thin film on stainless steel substrate

Journal of Crystal Growth

Volumn 307, Issue 1, 2007, Pages 82-86

  Liu, Zhengxin ^a   Osamura, Masato ^a   Ootsuka, Teruhisa ^a   Kuroda, Ryo ^a   Fukuzawa, Yasuhiro ^a   Otogawa, Naotaka ^a   Nakayama, Yasuhiko ^a   Makita, Yunosuke ^a   Tanoue, Hisao ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Adhesive ability; A1. Fe3Si buffer layer; A1. Interdiffusion; A1. Stainless steel substrate; A3. Crystalline growth; B2. Iron silicide

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTOR MATERIALS; STAINLESS STEEL; SUBSTRATES;

ADHESIVE ABILITY; CRYSTALLINE GROWTH; INTERDIFFUSION; IRON SILICIDE; STAINLESS STEEL SUBSTRATE;

THIN FILMS;

EID: 34548118354     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.007     Document Type: Article

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