Scanning photoinduced impedance microscopy using amorphous silicon photodiode structures

Analytical Chemistry

Volumn 79, Issue 16, 2007, Pages 6208-6214

  Zhou, Yinglin ^a   Chen, Li ^a   Krause, Steffi ^a   Chazalviel, Jean Noël ^b  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC IMPEDANCE; ELECTRIC INSULATORS; HYDROGENATION; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES;

HIGH-QUALITY INSULATOR; LATERAL DIFFUSION; PHOTODIODE STRUCTURES; SCANNING PHOTOINDUCED IMPEDANCE MICROSCOPY (SPIM);

PHOTODIODES;

SILICON;

ARTICLE; DIODE; IMPEDANCE; MICROSCOPY; OPTICAL RESOLUTION; SCANNING PHOTOINDUCED IMPEDANCE MICROSCOPY; SEMICONDUCTOR;

EID: 34548043514     PISSN: 00032700     EISSN: None     Source Type: Journal    
DOI: 10.1021/ac070797d     Document Type: Article

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