InAlAs/InGaAs metamorphic high electron mobility transistor with Cu/Pt/Ti gate and Cu airbridges

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 5 A, 2007, Pages 2848-2851

  Chang, Chun Wei ^a   Chen, Po Chou ^a   Lee, Huang Ming ^a   Chen, Szu Hung ^a   Sahoo, Kartik Chandra ^a   Chang, Edward Yi ^a   Liang, Muh Wang ^a   Hsieh, Tsung Eong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Copper airbridge; Copper metallization; InAlAs; MHEMT

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; HIGH ELECTRON MOBILITY TRANSISTORS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AIRBRIDGES; GATE STRUCTURE; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (MHEMT); SCHOTTKY CONTACT;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 34547912517     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2848     Document Type: Article

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