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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 2, 2007, Pages 542-546

Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films

(8) Chakraborty, Arpan a,b Haskell, Benjamin A c Wu, Feng c Keller, Stacia c DenBaars, Steven P c Nakamura, Shuji c Speck, James S c Mishra, Umesh K c

a UNIVERSITY OF CALIFORNIA (United States)

b Cree Santa Barbara Technology Center (United States)

c NONE

Author keywords

Atomic force microscopy; Cathode luminescence; Defects; High resolution X ray diffraction; Indium gallium nitride; Metal organic chemical vapor deposition; Multiple quantum wells; Nitrides; Nonpolar; Photoluminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

HIGH-RESOLUTION X-RAY DIFFRACTION; INDIUM GALLIUM NITRIDE;

OPTICAL PROPERTIES;

EID: 34547881163 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.542 Document Type: Article

Times cited : (2)

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