The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 183-187

  Nikiforov, A I ^a   Markov, V A ^a   Cherepanov, V A ^b   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Ge; Growth; MBE; Oscillations; RHEED; Si

Indexed keywords

ACTIVATION ENERGY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

GROWTH OSCILLATION PERIOD;

SEMICONDUCTING FILMS;

EID: 0032309141     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01235-8     Document Type: Article

References (9)

1. J.N. Neave, B.A. Joyce, P.J. Dobson N. Norton. Appl. Phys. Lett. (1983) 1.
2. B.A. Joyce, J. Zhang, T. Shitara, et al., J. Crystal Growth 115 (1991) 338.
3. T. Suzuki, I. Ishimura, T. Nishinaga. The 10th Symposium of Alloy Semiconductive Physics and Electronics, 1991 p. 57.
4. H.J.W. Zandvliet, H.B. Elswijk, D. Dijkkamp, E.J. van Loenen, J. Dieleman, J. Appl. Phys. 70 (1991) 2614.
5. O.P. Pchelyakov, I.G. Neisvestnyi, Z.Sh. Yanovitskaya, Phys. Low-Dim. Struct. 10-11 (1995) 389.
6. A.I. Nikiforov, V.A. Markov, O.P. Pchelyakov, Z.Sh. Yanovitskaya, Phys. Low-Dim. Struct. 7 (1997) 1.
7. B.Z. Kanter, A.I. Nikiforov, Pribory i technika eksperimenta 2 (1990) 156.
8. M. Fehrenbacher, H. Rauscher, U. Memmert, R.J. Behm, Surf. Sci. 385 (1997) 123.
9. S. Kodiyalam, K.E. Khor, S. Das Sarma, Phys. Rev. B 53 (1995) 9913.