Influence on hole and electron mobilities of using a multi-wall structural channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 3 A, 2007, Pages 943-948

  Mishima, Yasuyoshi ^a   Shido, Hideharu ^a   Fukuda, Masatoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Mobility; Multi wall; Orientation; Wall height

Indexed keywords

ELECTRON MOBILITY; GATES (TRANSISTOR); HOLE MOBILITY; MOLECULAR ORIENTATION; POLYCRYSTALLINE MATERIALS; SUBSTRATES;

BI-AXIAL STRAIN; MULTI-WALL CHANNEL STRUCTURE; SURFACE CHANNELS;

MOSFET DEVICES;

EID: 34547867456     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.943     Document Type: Article

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