Surface plasmon leakage in its coupling with an InGaNGaN quantum well through an Ohmic contact

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Yeh, Dong Ming ^a   Huang, Chi Feng ^a   Lu, Yen Cheng ^a   Chen, Cheng Yen ^a   Tang, Tsung Yi ^a   Huang, Jeng Jie ^a   Shen, Kun Ching ^a   Yang, Ying Jay ^a   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; OHMIC CONTACTS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SURFACE PLASMON RESONANCE;

DOPED SEMICONDUCTORS; PHOTOLUMINESCENCE (PL) INTENSITY; SP-QW COUPLING; SURFACE PLASMON LEAKAGE;

LEAKAGE CURRENTS;

EID: 34547850681     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2768913     Document Type: Article

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