Impact of residual impurities on annealing properties of vacancies in electroplated Cu studied using monoenergetic positron beams

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 20-24, 2007, Pages

  Uedono, Akira ^a   Mori, Kazuteru ^a   Ito, Kenichi ^a   Imamizu, Kentarou ^b   Hachiya, Takayo ^b   Kamijo, Hiroyuki ^b   Hasunuma, Masahiko ^b   Kaneko, Hisashi ^b   Toyoda, Hiroshi ^b   Ohdaira, Toshiyuki ^c   Suzuki, Ryouichi ^c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Annealing; Cu; Electroplate; Impurity; Positron; Vacancy

Indexed keywords

ANNEALING; COPPER COMPOUNDS; CRYSTAL IMPURITIES; ELECTROPLATING; GRAIN GROWTH; POSITRON ANNIHILATION;

DIVACANCIES; ISOCHRONAL ANNEALING; RECOVERY STAGE;

VACANCIES;

EID: 34547850423     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L483     Document Type: Article

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