Periodically aligned submicron lines of silicon and nickel fabricated using linearly polarized Nd:YAG pulse laser

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4154-4159

  Nishioka, Kensuke ^a   Horita, Susumu ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Laser induced periodic surface structure; Nd:YAG pulse laser; Ni; Polycrystalline; Si; Submicron line

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; LASER PULSES; LIGHT POLARIZATION; THIN FILMS;

LASER-INDUCED PERIODIC SURFACE STRUCTURE; SUBMICRON LINE;

SILICON COMPOUNDS;

EID: 34547842228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4154     Document Type: Article

References (34)

1. G. N. Maracas, G. L. Harris, C. A. Lee, and R. A. McFarlane: Appl. Phys. Lett. 33 (1978) 453.
2. H. J. Leamy, G. A. Rozgonyi, T. T. Sheng, and G. K. Celler: Appl. Phys. Lett. 32 (1978) 535.
3. M. Oron and G. Sorensen: Appl. Phys. Lett. 35 (1979) 782.
4. J. F. Young, J. E. Sipe, J. S. Preston, and H. M. van Driel: Appl. Phys. Lett. 41 (1982) 261.
5. S. R. J. Brueck and D. J. Ehrlich: Phys. Rev. Lett. 48 (1982) 1678.
6. N. R. Isenor: Appl. Phys. Lett. 31 (1977) 148.
7. A. K. Jain, V. N. Kulkarni, D. K. Sood, and J. S. Uppal: J. Appl. Phys. 52 (1981) 4882.
8. P. E. Dyer and R. J. Farley: Appl. Phys. Lett. 57 (1990) 765.
9. Y. Wang, T. Natsui, Y. Makita, A. Kumano, and Y. Takeuchi: IEICE Trans. Electron. E83-C (2000) 1553.
10. J. F. Young, J. S. Preston, H. M. van Driel, and J. E. Sipe: Phys. Rev. B 27 (1983) 1155.
11. T. D. Lee, H. W. Lee, J. K. Kim, and C. O. Park: Appl. Phys. A 48 (1989) 475.
12. P. M. Fauchet and A. E. Siegman: Appl. Phys. Lett. 40 (1982) 824.
13. A. J. Pedraza, Y. F. Guan, J. D. Fowlkes, and D. A. Smith: J. Vac. Sci. Technol. B 22 (2004) 2823.
14. M. Bolle and S. Lazare: J. Appl. Phys. 73 (1993) 3516.
15. D. K. Fork, G. B. Anderson, J. B. Boyce, R. I. Johnson, and P. Mei: Appl. Phys. Lett. 68 (1996) 2138.
16. A. Shih, C. Y. Meng, and S. C. Lee: J. Appl. Phys. 88 (2000) 3725.
17. S. Horita, Y. Nakata, and A. Shimoyama: Appl. Phys. Lett. 78 (2001) 2250.
18. C. H. Oh, M. Ozawa, and M. Matsumura: Jpn. J. Appl. Phys. 37 (1998) L492.
19. J. Y. Park, H. H. Park, K. Y. Lee, andH. K. Chung: Jpn. J. Appl. Phys. 43 (2004) 1280.
20. Y. Nakata, T. Okada, and M. Maeda: Appl. Phys. Lett. 81 (2002) 4239.
21. Y. Nakata, T. Okada, and M. Maeda: Appl. Phys. A 77 (2003) 399.
22. T. Kondo, S. Matsuo, S. Juodkazis, V. Mizeikis, and H. Misawa: Appl. Phys. Lett. 82 (2003) 2758.
23. N. Eustathopoulos and B. Drevet: Mater. Sci. Eng. A 249 (1998) 176.
24. H. Fujii, M. Yamamoto, S. Hara, and K. Nogi: J. Mater. Sci. 34 (1999) 3165.
25. T. Young: Trans. R. Soc. London 95 (1805) 65.
26. P. Nikolopoulos, G. Ondracek, and D. Sotiropoulou: Ceram. Int. 15 (1989) 201.
27. K. F. Man: Int. J. Thermophys. 21 (2000) 793.
28. S. Nakamura and T. Hibiya: Int. J. Thermophys. 13 (1992) 1061.
29. S. M. Sze: Physics of Semiconductor Devices (Wiley-Interscience, New York, 1981) 2nd ed., p. 750.
30. H. Okamoto and Y. Hamakawa: J. Non-Cryst. Solids 77-78 (1985) 1441.
31. F. Secco d'Aragona: J. Electrochem. Soc. 119 (1972) 948.
32. M. Hatano, S. Moon, M. Lee, K. Suzuki, and C. P. Grigoropoulos: J. Appl. Phys. 87 (2000) 36.
33. S. J. Henley, J. D. Carey, and S. R. P. Silva: Phys. Rev. B 72 (2005) 195408.
34. V. E. Henrich and P. A. Cox: The Surface Science of Metal Oxides (Cambridge University Press, Cambridge, 1994) p. 382.