Study of diffusion barrier properties of ionized metal plasma (IMP) deposited TaN between Cu and SiO2

Materials Science in Semiconductor Processing

Volumn 3, Issue 3, 2000, Pages 179-184

  Lee, Y K ^a   Maung Latt, Khin ^a   Jaehyung, Kim ^a   Lee, Kangsoo ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COPPER DEPOSITS; DIFFUSION IN SOLIDS; IONIZATION OF SOLIDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SILICA; TANTALUM COMPOUNDS; X RAY DIFFRACTION;

IONIZED METAL PLASMAS (IMP);

PLASMA DEVICES;

EID: 0343878054     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00002-0     Document Type: Article

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