Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

Thin Solid Films

Volumn 515, Issue 22, 2007, Pages 8246-8249

  Ishikawa, M ^a,b   Muramoto, I ^a   Machida, H ^a   Imai, S ^b   Ogura, A ^b   Ohshita, Y ^c  

^a Tri Chemical Laboratories Inc   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

CVD; Ni(PF3)4; NiSix; Si3H8; Step coverage

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; NICKEL ALLOYS;

CONSTANT TEMPERATURE; STEP COVERAGE;

METALLIC FILMS;

EID: 34547800651     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.051     Document Type: Article

References (6)

1. Manabe K., Takahashi K., Ikarashi T., Morioka A., Watanabe H., Yoshihara T., and Tatsumi T. Jpn. J. Appl. Phys., Part 1 44 (2005) 2205
2. Manabe K., Hase T., Tatsumi T., Watanabe H., and Yasutake K. Jpn. J. Appl. Phys., Part 1 45 (2006) 9053
3. Kittel J.A., Lauwers A., Pawlak M.A., van Dal M.J.H., Veloso A., Anil K.G., Pourtois G., Demeurisse C., Schram T., Brijs B., de Potter M., Vrancken C., and Maex K. Microelectron. Eng. 82 (2005) 441
4. Ishikawa M., Kada T., Machida H., Ohshita Y., and Ogura A. Jpn. J. Appl. Phys., Part 1 43 (2004) 1833
5. Ohshita Y., Ishikawa M., Kada T., Machida H., and Ogura A. Jpn. J. Appl. Phys., Part 2 44 (2005) L315
6. Ishikawa M., Machida H., Ogura A., and Ohshita Y. In: Gusev E.P., Chen L.J., Kwong D.L., Timans P.J., Roozeboom F., Öztürk M.C., and Iwai H. (Eds). ECS 207th Meeting, Quebec City, Canada, May 15-20, 2005, Proceedings 2005-05 (2005) 612