High-Q integrated inductor using post-CMOS selectively grown porous silicon (SGPS) technique for RFIC applications

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 763-766

  Li, Chen ^a   Liao, Huailin ^a   Wang, Chuan ^a   Yin, Jun ^a   Huang, Ru ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Integrated inductor; Phase noise; Post CMOS; Q factor; Selectively grown porous silicon (SGPS); Substrate loss; Voltage controlled oscillator (VCO)

Indexed keywords

ELECTRIC INDUCTORS; INTEGRATED CIRCUITS; PHASE NOISE; POROUS SILICON; SEMICONDUCTING SILICON; SILICON WAFERS; SUBSTRATES; VARIABLE FREQUENCY OSCILLATORS;

INTEGRATED INDUCTOR; Q-FACTOR; SELECTIVELY GROWN POROUS SILICON;

CMOS INTEGRATED CIRCUITS;

EID: 34547778440     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901682     Document Type: Article

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