A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 291-293

  Wang, Tao ^a   Chen, Chun Hao ^a   Lin, Yo Sheng ^b   Lu, Shey Shi ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

CMOS; Distributed amplifier (DA); Inductively coupled plasma (ICP); Inductor; Noise figure (NF); Quality factor (Q); System on a chip (SOC)

Indexed keywords

DRY ETCHING; ELECTRIC INDUCTORS; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUITS; MICROMACHINING; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON;

DISTRIBUTED AMPLIFIER; NOISE FIGURE; SYSTEM-ON-A-CHIP (SOC);

CMOS INTEGRATED CIRCUITS;

EID: 33645651009     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871857     Document Type: Article

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