A new constant-current technique for MOSFET parameter extraction

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 351-356

  Lu, Chao Yang ^a   Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; SILICON CARBIDE;

DRAIN CONTACTS; DRAIN CURRENTS; PARAMETER EXTRACTION; SERIES RESISTANCE;

MOSFET DEVICES;

EID: 12344338682     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.09.002     Document Type: Article

References (10)

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3. A. Ortiz-Conde, F.J. Garcia Sanchez, J.J. Liou, A. Cerdeira, M. Estrada, and Y. Yue A review of recent MOSFET threshold voltage extraction methods Microelectron. Reliab. 42 2002 583 596
4. J.G.J. Chern, P. Chang, R.F. Motta, and N. Godinho A new method to determine MOSFET channel length IEEE Electron Dev. Lett. EDL-1 1980 170 173
5. K. Terada, and H. Muta A new method to determine effective MOSFET channel length Jap. J. Appl. Phys. 18 1979 953 959
6. Y. Taur, D.S. Zicherman, D.R. Lombardi, P.J. Restle, C.H. Hsu, and H.I. Nanafi A new 'shift and ratio' method for MOSFET channel-length extraction IEEE Electron Dev. Lett. 13 1992 267 269
7. C.-Y. Lu, J.A. Cooper Jr., G.Y. Chung, J.R. Williams, K. McDonald, and L.C. Feldman Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities Mater. Sci. Forum 389-393 2002 977 980 [The sample used in the present study is sample W, measured before ohmic contact anneal.]
8. 2/4H-SiC interface IEEE Trans. Electron Dev. 50 2003 1582 1588 [The sample used in the present study is sample W, measured before ohmic contact anneal.]
9. G. Ghibaudo New method for the extraction of MOSFET parameters Electron. Lett. 24 1988 543 545
10. W. Fikry, G. Ghibaudo, H. Haddara, S. Cristoloveanu, and M. Dutoit Method for extracting deep submicrometre MOSFET parameters Electron. Lett. 31 1995 762 764