60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga0.65As Metamorphic HEMTs on GaAs

IEEE Electron Device Letters

Volumn 24, Issue 12, 2003, Pages 724-726

  Zaknoune, M ^a   Ardouin, M ^a   Cordier, Y ^b   Bollaert, S ^a   Bonte, B ^a   Theron D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Ctr Rech l'Hetero Epitaxie Applic

Author keywords

Compound semiconductor; High electron mobility transistor (HEMT); High frequency; Metamorphic; Microwave; Power

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC POWER MEASUREMENT; GATES (TRANSISTOR); MICROWAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE; SURFACE STATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0346500855     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.819914     Document Type: Article

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