Growth mechanism of TiSi nanopins on Ti5Si3 by atmospheric pressure chemical vapor deposition

Journal of Physical Chemistry C

Volumn 111, Issue 29, 2007, Pages 10814-10817

  Du, Jun ^a,b   Du, Piyi ^a   Hao, Peng ^a   Huang, Yanfei ^a   Ren, Zhaodi ^a   Han, Gaorong ^a   Weng, Wenjian ^a   Zhao, Gaoling ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; SINGLE CRYSTALS; TANTALUM COMPOUNDS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; GROWTH MECHANISM; NANOPINS;

NANOSTRUCTURED MATERIALS;

EID: 34547683154     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp071019s     Document Type: Article

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