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Applied Physics Letters

Volumn 67, Issue , 1995, Pages 3066-

Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se 3

(4) Ye, J a Yoshida, T a Nakamura, Y a Nittono, O a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; COMPOSITION; CRYSTAL STRUCTURE; CRYSTAL SYMMETRY; ELECTRON DIFFRACTION; ELECTRON MICROSCOPY; ENERGY GAP; HELIUM NEON LASERS; OPTICAL PROPERTIES;

GALLIUM INDIUM SELENIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTICAL ACTIVITY; OPTICAL ROTATORY DISPERSION; ROTARY POWER; VACANCY ORDERED SEMICONDUCTOR MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029410041 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.114866 Document Type: Article

Times cited : (52)

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