Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1-xN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 39, Issue 2, 2007, Pages 209-213

  Zhao, X ^a   Wei, S Y ^a   Xia, C X ^a  

^a HENAN NORMAL UNIVERSITY   (China)

Author keywords

Built in electric field; Oscillator strength; Quantum dots (QDs)

Indexed keywords

BINDING ENERGY; ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; VARIATIONAL TECHNIQUES;

HOLE PAIRS; LUMINESCENT PROPERTIES; OSCILLATOR STRENGTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547679571     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.04.011     Document Type: Article

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